2. Program manager
  3. Maksim Y. Vinnichenko
Maksim Y. Vinnichenko
Maksim Y. Vinnichenko
Associate Professor at the Higher School of Engineering Physics
Deputy Director of the Institute of Economics and Technology in the field of «Engineering Physics»

Candidate of Physical and Mathematical Sciences

Associate Professor — Higher School of Engineering Physics

Deputy Director of the IET in the direction of «Technical Physics»

English proficiency:

Fluent

Research projects:

Currently, the head of the Russian Science Foundation grant «23−12−36 Optical phenomena in semiconductor micro- and nanostructures in strong electric fields» and a participant in 4 grants/projects.

Research topics:

«Creation of fundamental principles of new semiconductor sources of terahertz radiation based on GaAs/AlGaAs quantum wells, micro- and nanostructures based on GaN», «Theoretical and applied studies of GeSi quantum dots in the infrared and terahertz spectral regions», «Research of InAs nanowhisker for modern flexible electronics»

Field of study:

Physics, applied

Research interests:

Optical phenomena and nonequilibrium charge carriers in semiconductors and nanostructures. Development of new optoelectronic devices (sources and detectors) in the mid-infrared and terahertz spectral ranges

Research highlights:

Certificate of state registration of computer program No. 2 023 616 529 dated 03/29/2023 Bulletin No. 4 «Program for calculating the parameters of semiconductor solid solutions».

Patent No. 2 793 120 dated 03/29/2023 Bulletin No. 10 «Elastic LED matrix».

Specific requirement:

The necessary knowledge requirements for future graduate students are the presence of basic knowledge in the fields of theoretical physics, electronics, and solid state physics. Knowledge in the areas of mathematical modeling and programming, modeling of physical processes is also encouraged.

Main publications:

Mastalieva V. et al. «Second harmonic generation and broad-band photoluminescence in mesoporous Si/SiO 2 nanoparticles,» Nanophotonics 2024, 0218, doi.org/10.1515/nanoph-2024−0218

Kaveev A. et al. «Growth, Crystal Structure, and Photoluminescent Properties of Dilute Nitride InAsN Nanowires on Silicon for Infrared Optoelectronic,» ACS Appl. Nano Mater. 2024, 7(3), 3458−3467 pubs.acs.org/doi/abs/10.1021/acsanm.3c06295

Fedorov V. et al. «Non-Uniformly Strained Core-Shell InAs/InP Nanowires for Mid-Infrared Photonic applications,» ACS Appl. Nano Mater. 2023, 6(7), 5460−5468 doi.org/10.1021/acsanm.2c05575

Mitin D. et al. «Tuning the Optical Properties and Conductivity of Bundles in Networks of Single-Walled Carbon Nanotube,» J. Phys. Chem. Lett. 2022, 13, 8775−8782 doi.org/10.1021/acs.jpclett.2c01931

Mkrtchyan M. et al. «Effects of an External Magnetic Field on the Interband and Intraband Optical Properties of an Asymmetric Biconvex Lens-Shaped Quantum Dot,» Nanomaterials 2022, 12(1), 60 doi.org/10.3390/nano12010060

Shalygin V. et al. «Far-infrared spectroscopy of folded transverse acoustic phonons in 4H-SiC,» Appl. Phys. Lett. 117, 202 105 (2020) doi.org/10.1063/5.31 064

Olympiad Profiles:

  • Physical Sciences & Technology

Postgraduate Studies

1.3.11. Physics of Semiconductors